IRF644NPBF

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Package / Case : TO-220AB
Drain-Source Breakdown Voltage : 250 V
Continuous Drain Current : 14 A
Resistance Drain-Source RDS (on) : 240 mOhms


Features:

· Advanced Process Technology
· Dynamic dv/dt Rating
· 175°C Operating Temperature
· Fast Switching
· Fully Avalanche Rated
· Ease of Paralleling
· Simple Drive Requirements
· Lead-Free (only the TO-220AB version is currently available in a lead-free configuration)


Specifications

	Parameter	Max.	Units
ID @ TC = 25	Continuous Drain Current, VGS @ 10V	1.4	A
ID @ TC = 100	Continuous Drain Current, VGS @ 10V	9.9	A
IDM	Pulsed Drain Current	56	A
PD @ TC = 25	Power Dissipation	150	W
	Linear Derating Factor	1.0	W/
VGS	Gate-to-Source Voltage	±20	V
EAS	Single Pulse Avalanche Energy	180	mJ
IAR	Avalanche Current	8.4	A
EAR	Repetitive Avalanche Energy	15	mJ
dv/dt	Peak Diode Recovery dv/dt	7.9	V/ns
TJ TSTG	Operating Junction Storage Temperature Range	-55 to + 175
	Soldering Temperature, for 10 seconds	300(1.6mm from case)
	Mounting torque, 6-32 or M3 screw	10lb in (1.1N m)

Description

Fifth Generation HEXFET^® Power MOSFETs IRF644NPbF from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The TO-220 package IRF644NPbF is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.

The IRF644NPbF is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.