IRF6603

Transistor Polarity : N-Channel
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Mounting Style : Through Hole
Gate-Source Breakdown Voltage : 12 V
Maximum Operating Temperature : + 150 C
Continuous Drain Current : 28 A
Resistance Drain-Source RDS (on) : 5.5 mOhms
Package / Case : Direct-FET MT
Configuration : Single Dual Drain Dual Source


Application

Application Specific MOSFETs
Ideal for CPU Core DC-DC Converters
Low Conduction Losses
High Cdv/dt Immunity
Low Profile (<0.7 mm)
Dual Sided Cooling Compatible
Compatible with existing Surface MountTechniques




Specifications

	Parameter	Max.	Units
VDS	Drain-to-Source Voltage	30	V
VGS	Gate-to-Source Voltage	+20/-12
ID@ TC= 25°C	Continuous Drain Current, VGS @ 10V	92	A
ID@ TA= 25°C	Continuous Drain Current, VGS @ 10V	27
ID@ TA= 70°C	Continuous Drain Current, VGS @ 10V	22
IDM	Pulsed Drain Current	200
PD@ TA= 25°C	Power Dissipation	3.6	W
PD@ TA= 70°C	Power Dissipation	2.3
PD@ TC= 25°C	Power Dissipation	42
	Linear Derating Factor	0.029	W/°C
TJ TSTG	Operating Junction and Storage Temperature Range	-40 to + 150	°C

Description

The IRF6603 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET^TMpackaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note IRF6603 is followed regarding the manufacturing methods and process. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, IMPROVING previous best thermal resistance by 80%.

The IRF6603 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies. The IRF6603 has been optimized for parameters that are critical in synchronous buck converters including Rds(on), gate charge and Cdv/dt-induced turn on immunity. The IRF6603 offers particularly low Rds(on) and high Cdv/dt immunity for synchronous FET applications.

Parameters:

Technical/Catalog Information	IRF6603
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	27A
Rds On (Max) @ Id, Vgs	3.4 mOhm @ 25A, 10V
Input Capacitance (Ciss) @ Vds	6590pF @ 15V
Power - Max	3.6W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	72nC @ 4.5V
Package / Case	DirectFET? Isometric MT
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	IRF6603 IRF6603 IRF6603TR ND IRF6603TRND IRF6603TR