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IRF6608TR1

MOSFET

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SeekIC No. : 00158891 Detail

IRF6608TR1: MOSFET

IRF6608TR1 Data Sheet

floor Price/Ceiling Price

US $ .76~.76 / Piece | Get Latest Price
Part Number:
IRF6608TR1
Mfg:
International Rectifier
Supply Ability:
5000

Price Break

  • Qty
  • 0~690
  • 690~1000
  • Unit Price
  • $.76
  • $.76
  • Processing time
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : +/- 12 V Continuous Drain Current : 13 A
Resistance Drain-Source RDS (on) : 9 mOhms Configuration : Single
Package / Case : Direct-FET ST Packaging : Reel    

Description

Maximum Operating Temperature :
Mounting Style :
Transistor Polarity : N-Channel
Configuration : Single
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : +/- 12 V
Continuous Drain Current : 13 A
Resistance Drain-Source RDS (on) : 9 mOhms
Package / Case : Direct-FET ST


Parameters:

Technical/Catalog InformationIRF6608TR1
VendorInternational Rectifier
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C13A
Rds On (Max) @ Id, Vgs9 mOhm @ 13A, 10V
Input Capacitance (Ciss) @ Vds 2120pF @ 15V
Power - Max2.1W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs24nC @ 4.5V
Package / CaseDirectFET? Isometric ST
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names IRF6608TR1
IRF6608TR1



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