IRF6610TR1, US $ .61-.62 , International Rectifier, IRF6610TR1 DataSheet download, circuit diagram from SeekIC.com

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SeekIC No. : 00158662 Detail

IRF6610TR1: MOSFET

IRF6610TR1 Data Sheet

US $ .61~.62 / Piece | Get Latest Price

Part Number:: IRF6610TR1
Mfg:: International Rectifier
Supply Ability:: 5000

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Product Details

Quick Details

Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	150 V
Gate-Source Breakdown Voltage :	+/- 30 V	Continuous Drain Current :	15 A
Resistance Drain-Source RDS (on) :	5.2 m Ohms	Configuration :	Single Quad Drain
Maximum Operating Temperature :	+ 150 C	Mounting Style :	Through Hole
Package / Case :	DirectFET SQ Isometric	Packaging :	Reel

Description

Transistor Polarity : N-Channel
Packaging : Reel
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 150 V
Gate-Source Breakdown Voltage : +/- 30 V
Continuous Drain Current : 15 A
Configuration : Single Quad Drain
Resistance Drain-Source RDS (on) : 5.2 m Ohms
Package / Case : DirectFET SQ Isometric

Parameters:

Technical/Catalog Information	IRF6610TR1
Vendor	International Rectifier (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	15A
Rds On (Max) @ Id, Vgs	6.8 mOhm @ 15A, 10V
Input Capacitance (Ciss) @ Vds	1520pF @ 10V
Power - Max	2.2W
Packaging	Cut Tape (CT)
Gate Charge (Qg) @ Vgs	17nC @ 4.5V
Package / Case	DirectFET? Isometric SQ
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	IRF6610TR1 IRF6610TR1 IRF6610TR1CT ND IRF6610TR1CTND IRF6610TR1CT

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IRF6610TR1

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