IRF6611TRPBF

Configuration :
Maximum Operating Temperature :
Mounting Style :
Package / Case :
Transistor Polarity : N-Channel
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : 20 V
Resistance Drain-Source RDS (on) : 3.4 mOhms
Continuous Drain Current : 27 A


Features:

` RoHs Compliant `
` Lead-Free (Qualified up to 260  Reflow)
` Application Specific MOSFETs
` Ideal for CPU Core DC-DC Converters
` Low Conduction Losses
` High Cdv/dt Immunity
` Low Profile (<0.7mm)
` Dual Sided Cooling Compatible
` Compatible with existing Surface Mount Techniques


Specifications

	Parameter	Max.	Units
VDS	Drain-Source Voltage	30	V
VGS	Gate-to-Source Voltage	±20	V
ID @ TA = 25	Continuous Drain Current, VGS @ 10V	16	A
ID @ TA = 70	Continuous Drain Current, VGS @ 10V	32	A
PD @Tc = 25	Power Dissipation (PCB Mount)	150	A
IDM	Pulsed Drain Current	220	A
EAS	Single Pulse Avalanche Energy	310	mJ
IAR	Avalanche Current	22	A

Description

The IRF6611TRPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes.

The IRF6611TRPbF package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6611PbF balances industry leading on-state resistance while minimizing gate charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced losses make this product ideal for high frequency/high efficiency DC-DC converters that power high current loads such as the latest generation of microprocessors. The IRF6611PbF has been optimized for parameters that are critical in synchronous buck converter's SyncFET sockets.

Parameters:

Technical/Catalog Information	IRF6611TRPBF
Vendor	International Rectifier (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25° C	32A
Rds On (Max) @ Id, Vgs	2.6 mOhm @ 27A, 10V
Input Capacitance (Ciss) @ Vds	4860pF @ 15V
Power - Max	3.9W
Packaging	Cut Tape (CT)
Gate Charge (Qg) @ Vgs	56nC @ 4.5V
Package / Case	DirectFET? Isometric MX
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IRF6611TRPBF IRF6611TRPBF IRF6611TRPBFCT ND IRF6611TRPBFCTND IRF6611TRPBFCT