MOSFET
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| Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 40 V | ||
| Gate-Source Breakdown Voltage : | 20 V | Continuous Drain Current : | 12.7 A | ||
| Resistance Drain-Source RDS (on) : | 9.9 mOhms | Packaging : | Reel |
| Technical/Catalog Information | IRF6614TRPBF |
| Vendor | International Rectifier |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Continuous Drain (Id) @ 25° C | 12.7A |
| Rds On (Max) @ Id, Vgs | 8.3 mOhm @ 12.7A, 10V |
| Input Capacitance (Ciss) @ Vds | 2560pF @ 20V |
| Power - Max | 2.1W |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | 29nC @ 4.5V |
| Package / Case | DirectFET? Isometric ST |
| FET Feature | Logic Level Gate |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IRF6614TRPBF IRF6614TRPBF IRF6614TRPBFTR ND IRF6614TRPBFTRND IRF6614TRPBFTR |