MOSFET
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| Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 100 V | ||
| Gate-Source Breakdown Voltage : | +/- 30 V | Continuous Drain Current : | 19 A | ||
| Resistance Drain-Source RDS (on) : | 5 m Ohms | Configuration : | Single Quad Drain Dual Source | ||
| Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole | ||
| Package / Case : | Direct-FET MX | Packaging : | Reel |
| Technical/Catalog Information | IRF6616TR1 |
| Vendor | International Rectifier (VA) |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25° C | 19A |
| Rds On (Max) @ Id, Vgs | 5 mOhm @ 19A, 10V |
| Input Capacitance (Ciss) @ Vds | 3765pF @ 20V |
| Power - Max | 2.8W |
| Packaging | Cut Tape (CT) |
| Gate Charge (Qg) @ Vgs | 44nC @ 4.5V |
| Package / Case | DirectFET? Isometric MX |
| FET Feature | Logic Level Gate |
| Drawing Number | * |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | IRF6616TR1 IRF6616TR1 IRF6616TR1CT ND IRF6616TR1CTND IRF6616TR1CT |