MOSFET
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| Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 30 V | ||
| Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 16 A | ||
| Resistance Drain-Source RDS (on) : | 5.4 m Ohms | Configuration : | Single Quad Drain Dual Source | ||
| Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole | ||
| Package / Case : | Direct-FET ST | Packaging : | Reel |
| Technical/Catalog Information | IRF6626TR1 |
| Vendor | International Rectifier (VA) |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25° C | 16A |
| Rds On (Max) @ Id, Vgs | 5.4 mOhm @ 16A, 10V |
| Input Capacitance (Ciss) @ Vds | 2380pF @ 15V |
| Power - Max | 2.2W |
| Packaging | Cut Tape (CT) |
| Gate Charge (Qg) @ Vgs | 29nC @ 4.5V |
| Package / Case | DirectFET? Isometric ST |
| FET Feature | Logic Level Gate |
| Drawing Number | * |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | IRF6626TR1 IRF6626TR1 IRF6626TR1CT ND IRF6626TR1CTND IRF6626TR1CT |