MOSFET MOSFT 100V 80A 15mOhm 81nC
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 100 V |
Gate-Source Breakdown Voltage : | 20 V | Continuous Drain Current : | 80 A |
Mounting Style : | Through Hole | Package / Case : | TO-220AB |
Packaging : | Tube |
Symbol | Parameter | Max. | Units |
ID @ TC = 25 | Continuous Drain Current, VGS @ 10V | 80 | V |
ID @ TC = 100 | Continuous Drain Current, VGS @ 10V | 57 | V |
IDM | Pulsed Drain Current | 320 | A |
PD @TC = 25 | Power Dissipation | 1.8 | A |
Linear Derating Factor | ± 20 | A | |
VGS | Gate-to-Source Voltage | 16 | W |
dv/dt | Peak Diode Recovery dv/dt | -55 to + 150 | W |
TJ TSTG |
Operating Junction and Storage Temperature Range |
300 (1.6mm from case ) | mW/ |
Soldering Temperature, for 10 seconds | |||
Mounting torque, 6-32 or M3 screw | 1.1(10) | N•m (lbf•in) |
Technical/Catalog Information | IRF8010PBF |
Vendor | International Rectifier |
Category | Discrete Semiconductor Products |
Mounting Type | Through Hole |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25° C | 80A |
Rds On (Max) @ Id, Vgs | 15 mOhm @ 45A, 10V |
Input Capacitance (Ciss) @ Vds | 3830pF @ 25V |
Power - Max | 260W |
Packaging | Bulk |
Gate Charge (Qg) @ Vgs | 120nC @ 10V |
Package / Case | TO-220-3 (Straight Leads) |
FET Feature | Standard |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IRF8010PBF IRF8010PBF |