IRF9230

Features: • -5.5A and -6.5A, -150V and -200V• rDS(ON) = 0.8W and 1.2W• Single Pulse Avalanche Energy Rated• SOA is Power Dissipation Limited• Nanosecond Switching Speeds• Linear Transfer Characteristics• High Input Impedance• Related Literature - TB3...

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SeekIC No. : 004376890 Detail

IRF9230: Features: • -5.5A and -6.5A, -150V and -200V• rDS(ON) = 0.8W and 1.2W• Single Pulse Avalanche Energy Rated• SOA is Power Dissipation Limited• Nanosecond Switching Speed...

floor Price/Ceiling Price

Part Number:
IRF9230
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/3/28

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Product Details

Description



Features:

• -5.5A and -6.5A, -150V and -200V
• rDS(ON) = 0.8W and 1.2W
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
          - TB334, "Guidelines for Soldering Surface Mount Components to PC Boards"



Specifications

  IRF9230 IRF9231 IRF9232 IRF9233 UNITS
Drain to Source Breakdown Voltage (Note 1) . . . . . VDS -200 -150 -200 -150 V
Drain to Gate Voltage (RGS = 20kW) (Note 1) . .. .. . . .VDGR -200 -150 -200 -150 V
Continuous Drain Current . . . . . . . . . . ID
-6.5 -6.5 -5.5 -3.5 A
TC = 100 . . . . . . . . . . . . . . . . . . ID
-4.0 -4.0 -3.5
-3.5 A
Pulsed Drain Current (Note 3) . . . . . . . . . IDM -26 -26 -22 -22 A
Gate to Source Voltage . . . . . . .. . . . . . VGS ±20 ±20 ±20 ±20 V
Maximum Power Dissipation (Figure 1) . . . . . . . . PD 75 75 75 75 W
Linear Derating Factor . . . . . . . . . . . 0.6 0.6 0.6 0.6 W/
Single Pulse Avalanche Energy Rating (Note 4). . .. . EAS 500 500 500 500 mJ
Operating and Storage Temperature . . . . . . . . TJ, TSTG -55 to 150 -55 to 150 -55 to 150 -55 to 150
Maximum Temperature for Soldering          
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . .TL 300 300 300 300
Package Body for 10s, See Techbrief 334 . . . . . . . Tpkg 260 260 260 260



Description

These devices are P-Channel enhancement mode silicon gate power field effect transistors IRF9230. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.

Formerly Developmental type IRF9230.


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