IRF9232

Features:

• -5.5A and -6.5A, -150V and -200V
• rDS(ON) = 0.8W and 1.2W
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
          - TB334, "Guidelines for Soldering Surface Mount Components to PC Boards"


Specifications

	IRF9230	IRF9231	IRF9232	IRF9233	UNITS
Drain to Source Breakdown Voltage (Note 1) . . . . . VDS	-200	-150	-200	-150	V
Drain to Gate Voltage (RGS = 20kW) (Note 1) . .. .. . . .VDGR	-200	-150	-200	-150	V
Continuous Drain Current . . . . . . . . . . ID	-6.5	-6.5	-5.5	-3.5	A
TC = 100 . . . . . . . . . . . . . . . . . . ID	-4.0	-4.0	-3.5	-3.5	A
Pulsed Drain Current (Note 3) . . . . . . . . . IDM	-26	-26	-22	-22	A
Gate to Source Voltage . . . . . . .. . . . . . VGS	±20	±20	±20	±20	V
Maximum Power Dissipation (Figure 1) . . . . . . . . PD	75	75	75	75	W
Linear Derating Factor . . . . . . . . . . .	0.6	0.6	0.6	0.6	W/
Single Pulse Avalanche Energy Rating (Note 4). . .. . EAS	500	500	500	500	mJ
Operating and Storage Temperature . . . . . . . . TJ, TSTG	-55 to 150	-55 to 150	-55 to 150	-55 to 150
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . .TL	300	300	300	300
Package Body for 10s, See Techbrief 334 . . . . . . . Tpkg	260	260	260	260

Description

These devices are P-Channel enhancement mode silicon gate power field effect transistors IRF9232. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.

Formerly Developmental type IRF9232.