IRF9530SPbF

The IRF9530SPbF is designed as the third generation HEXFET from international rectifier which provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

It has eight features. (1)Surface mount. (2)Available in tape & reel. (3)Dynamic dv/dt rating. (4)Repetitive avalanche rated. (5)P-channel. (6)175°C operating temperature. (7)Fast switching. (8)Lead free. That are all the main features.

Some absolute maximum ratings have been concluded into several points as follow. (1)Its continuous drain current Vgs=-10V would be -12A at 25°C and would be -8.2A at 100°C. (2)Its pulsed drain current would be -48A. (3)Its power dissipation would be 88W. (4)Its power dissipation (PCB mount) would be 3.7W. (5)Its linear derating factor would be 0.59W/°C. (6)Its linear derating factor (PCB mount) would be 0.025W/°C. (7)Its gate to source voltage would be +/-20V. (8)Its single pulse avalanche energy would be 400mJ. (9)Its repetitive avalanche energy would be 8.8mJ. (10)Its peak diode recovery dv/dt would be -5.5V/ns. (11)Its junction and storage temperature range would be from -55°C to +175°C. (12)Its soldering temperature for 10 seconds would be 300°C.

Also some electrical characteristics are concluded as follow. (1)Its drain to source breakdown voltage would be min -100V. (2)Its breakdown voltage temperature coefficient would be typ -0.10V/°C. (3)Its static drain to source on resistance would be max 0.3 ohms. (4)Its forward transconductance would be min 3.7S. (5)Its gate threshold voltage would be min -2.0V and max -4.0V. (6)Its drain to source leakage current would be max -100uA at Vds=-100V and would be max -500uA at Vds=-80V, Tj=100°C. (7)Its gate to source forward leakage would be max -100nA. (8)Its gate to source reverse leakage would be max 100nA. (9)Its total gate charge would be max 38nC. And so on. If you have any question or suggestion or want to know more information please contact us for details. Thank you!