IRF9540

MOSFET -100V Single P-Channel HEXFET

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IRF9540 Picture
SeekIC No. : 00151311 Detail

IRF9540: MOSFET -100V Single P-Channel HEXFET

floor Price/Ceiling Price

US $ 2.26~3.32 / Piece | Get Latest Price
Part Number:
IRF9540
Mfg:
Vishay/Siliconix
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~100
  • 100~250
  • Unit Price
  • $3.32
  • $2.69
  • $2.41
  • $2.26
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/4/28

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : - 100 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 19 A
Resistance Drain-Source RDS (on) : 0.2 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-220AB Packaging : Tube    

Description

Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Transistor Polarity : P-Channel
Packaging : Tube
Package / Case : TO-220AB
Continuous Drain Current : 19 A
Resistance Drain-Source RDS (on) : 0.2 Ohms
Drain-Source Breakdown Voltage : - 100 V


Features:

• 19A, 100V
• rDS(ON) = 0.200W
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
       -  TB334 "Guidelines for Soldering Surface Mount Components to PC Boards"



Pinout

  Connection Diagram


Specifications

  IRF9540,
RF1S9540SM
UNITS
Drain to Source Breakdown Voltage (Note 1) . . . . . VDS -100 V
Drain to Gate Voltage (RGS = 20k) (Note 1) . .. .. . . .VDGR -100 V
Continuous Drain Current . . . . . . . . . . ID
-19 A
TC = 100 . . . . . . . . . . . . . . . . . . ID
-12 A
Pulsed Drain Current (Note 3) . . . . . . . . . IDM -76 A
Gate to Source Voltage . . . . . . .. . . . . . VGS ±20 V
Maximum Power Dissipation (Figure 1) . . . . . . . . PD 150 W
Linear Derating Factor (Figure 1) . . . . . . . . . . . 1 W/
Single Pulse Avalanche Energy Rating (Note 4). . .. . EAS 960 mJ
Operating and Storage Temperature . . . . . . . . TJ, TSTG -55 to 175
Maximum Temperature for Soldering    
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . .TL 300
Package Body for 10s, See Techbrief 334 . . . . . . . Tpkg 260



Description

These are P-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs IRF9540 are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. They can be operated directly from integrated circuits.

Formerly Developmental Type IRF9540.


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