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Part Number: IRF9540N

 

 

 

 

Description: Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low o...


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IRF9540N General Description


Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.

IRF9540N Maximum Ratings

  Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ -10V -23 A
ID @ TC = 100°C Continuous Drain Current, VGS @ -10V -16
IDM Pulsed Drain Current -76
PD @TC = 25°C Power Dissipation 140 W
  Linear Derating Factor 0.91 W/
VGS Gate-to-Source Voltage ± 20 V
EAS Single Pulse Avalanche Energy 430 mJ
IAR Avalanche Current -11 A
EAR Repetitive Avalanche Energy 14 mJ
dv/dt Peak Diode Recovery dv/dt -5.0 V/ns
TJ
TSTG		 Operating Junction and
Storage Temperature Range		 -55 to + 175
  Soldering Temperature, for 10 seconds 300 (1.6mm from case )
  Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)  

IRF9540N Features

·Advanced Process Technology
·Dynamic dv/dt Rating
·175°C Operating Temperature
·Fast Switching
·P-Channel
·Fully Avalanche Rated

IRF9540N datasheet

IRF9540N
PDF/DataSheet Download

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