MFG:IR Package Cooled:TO-220 D/C:2006-4-5 0:00
MFG: IR
Package Cooled: TO-220
D/C: 2006-4-5 0:00
Description: These are P-Channel enhancement mode silicon gate power field effect transistors. They are advanced po...
These are P-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for other high-power switching devices. The high input impedance allows these types to be operated directly from integrated circuits.
Formerly developmental type TA17512.
| UNITS | |||
| Drain to Source Voltage (Note 1) | VDSS | -200 | V |
| Drain to Gate Voltage (RGS = 20kW)(Note 1) | VDGR | -200 | V |
| Continuous Drain Current TC = 100 |
ID ID |
-6.5 -4 |
V |
| Pulsed Drain Current (Note 3) | IDM | -26 | A |
| Gate to Source Voltage | VGS | ±20 | |
| Maximum Power Dissipation | PD | 75 | |
| Dissipation Derating Factor | 0.6 | W | |
| Single Pulse Avalanche Energy Rating (Note 4) | EAS | 500 | W/ |
| Operating and Storage Temperature | TJ, TSTG | -55 to 150 | |
| Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. Package Body for 10s, See Techbrief 334 |
TL Tpkg |
300 260 |
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
IRF9630
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