IRF9640

Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-220AB
Continuous Drain Current : 11 A
Drain-Source Breakdown Voltage : - 200 V
Resistance Drain-Source RDS (on) : 0.5 Ohms


Features:

• 11A, 200V
• rDS(ON) = 0.500W
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
       - TB334, "Guidelines for Soldering Surface Mount Components to PC Boards"


Specifications

	IRF9640, RF1S9640SM	UNITS
Drain to Source Breakdown Voltage (Note 1) . . . . . VDS	-200	V
Drain to Gate Voltage (RGS = 20kW) (Note 1) . .. .. . . .VDGR	-200	V
Continuous Drain Current . . . . . . . . . . ID	-11	A
TC = 100 . . . . . . . . . . . . . . . . . . ID	-7	A
Pulsed Drain Current (Note 2) . . . . . . . . . IDM	-44	A
Gate to Source Voltage . . . . . . .. . . . . . VGS	±20	V
Maximum Power Dissipation . . . . . . . . PD	125	W
Linear Derating Factor . . . . . . . . . . .	1	W/
Single Pulse Avalanche Energy Rating (Note3, 4). . .. . EAS	790	mJ
Operating and Storage Temperature . . . . . . . . TJ, TSTG	-55 to 150
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . .TL	300
Package Body for 10s, See Techbrief 334 . . . . . . . Tpkg	260

Description

These are P-Channel enhancement mode silicon-gate power field-effect transistors IRF9640. They are advanced power MOSFETs designed, tested, and guaranteed to withstand specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and as drivers for other high-power switching devices. The high input impedance allows these types to be operated directly from integrated circuits.

Formerly developmental type IRF9640.