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MFG:N/A  D/C:TO-220  

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Part Number: IRF9640

 

MFG: N/A

 

D/C: TO-220

Description: These are P-Channel enhancement mode silicon-gate power field-effect transistors. They are advanced power MOSFETs desig...


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IRF9640 General Description


These are P-Channel enhancement mode silicon-gate power field-effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and as drivers for other high-power switching devices. The high input impedance allows these types to be operated directly from integrated circuits.

Formerly developmental type TA17522.

IRF9640 Maximum Ratings

  IRF9640, RF1S9640SM UNITS
Drain to Source Breakdown Voltage (Note 1) . . . . . VDS -200 V
Drain to Gate Voltage (RGS = 20kW) (Note 1) . .. .. . . .VDGR -200 V
Continuous Drain Current . . . . . . . . . . ID
 -11 A
TC = 100 . . . . . . . . . . . . . . . . . . ID
 -7 A
Pulsed Drain Current (Note 2) . . . . . . . . . IDM -44 A
Gate to Source Voltage . . . . . . .. . . . . . VGS ±20
 V
Maximum Power Dissipation . . . . . . . . PD 125 W
Linear Derating Factor . . . . . . . . . . . 1 W/
Single Pulse Avalanche Energy Rating (Note3, 4). . .. . EAS 790 mJ
Operating and Storage Temperature . . . . . . . . TJ, TSTG -55 to 150
Maximum Temperature for Soldering    
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . .TL 300
Package Body for 10s, See Techbrief 334 . . . . . . . Tpkg 260

IRF9640 Features

• 11A, 200V
• rDS(ON) = 0.500W
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
       - TB334, "Guidelines for Soldering Surface Mount Components to PC Boards"

IRF9640 datasheet

IRF9640
PDF/DataSheet Download

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Related Part Number

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