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IRF9910TR

MOSFET 2N-CH 20V 10A 8-SOIC

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SeekIC No. : 003429834 Detail

IRF9910TR: MOSFET 2N-CH 20V 10A 8-SOIC

IRF9910TR Data Sheet

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Part Number:
IRF9910TR
Mfg:
Supply Ability:
5000

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  • 1~5000
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  • Processing time
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Total Cost: $ 0.00

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Product Details

Quick Details

Series: HEXFET® Manufacturer: International Rectifier
FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V Drain Source Voltage VDS : + / - 20 V
Current - Continuous Drain (Id) @ 25° C: 10A, 12A Rds On (Max) @ Id, Vgs: 13.4 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.55V @ 250µA Gate Charge (Qg) @ Vgs: 11nC @ 4.5V
Input Capacitance (Ciss) @ Vds: 900pF @ 10V Power - Max: 2W
Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO    

Description

FET Feature: Logic Level Gate
Mounting Type: Surface Mount
FET Type: 2 N-Channel (Dual)
Drain to Source Voltage (Vdss): 20V
Power - Max: 2W
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Gate Charge (Qg) @ Vgs: 11nC @ 4.5V
Supplier Device Package: 8-SO
Packaging: Tape & Reel (TR)
Series: HEXFET®
Manufacturer: International Rectifier
Rds On (Max) @ Id, Vgs: 13.4 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.55V @ 250µA
Current - Continuous Drain (Id) @ 25° C: 10A, 12A
Input Capacitance (Ciss) @ Vds: 900pF @ 10V


Parameters:

Technical/Catalog InformationIRF9910TR
VendorInternational Rectifier
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET Polarity2 N-Channel (Dual)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25° C10A, 12A
Rds On (Max) @ Id, Vgs13.4 mOhm @ 10A, 10V
Input Capacitance (Ciss) @ Vds 900pF @ 10V
Power - Max2W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs11nC @ 4.5V
Package / Case8-SOIC (3.9mm Width)
FET FeatureLogic Level Gate
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names IRF9910TR
IRF9910TR



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