Position: Home  > All Categories> Integrated Circuits (ICs) > IRF9Z24NLPBF

IRF9Z24NLPBF

MOSFET P-CH 55V 12A TO-262

product image

IRF9Z24NLPBF Picture
See larger image
SeekIC No. : 003431749 Detail

IRF9Z24NLPBF: MOSFET P-CH 55V 12A TO-262

IRF9Z24NLPBF Data Sheet

floor Price/Ceiling Price

US $ .31~.94 / Piece | Get Latest Price
Part Number:
IRF9Z24NLPBF
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~100
  • 100~250
  • 250~500
  • 500~1000
  • 1000~2500
  • 2500~10000
  • Unit Price
  • $.94
  • $.58
  • $.43
  • $.4
  • $.38
  • $.35
  • $.34
  • $.31
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
View more price & deliveries
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/4/28

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Series: HEXFET® Manufacturer: International Rectifier
FET Type: MOSFET P-Channel, Metal Oxide Gain : 19.5 dB
Transistor Type: - Current - Collector (Ic) (Max): -
FET Feature: Standard Drain to Source Voltage (Vdss): 55V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 12A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 175 mOhm @ 7.2A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) @ Vgs: 19nC @ 10V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 350pF @ 25V
Power - Max: 3.8W Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Supplier Device Package: TO-262    

Description

Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Type: MOSFET P-Channel, Metal Oxide
FET Feature: Standard
Gate Charge (Qg) @ Vgs: 19nC @ 10V
Current - Continuous Drain (Id) @ 25° C: 12A
Vgs(th) (Max) @ Id: 4V @ 250µA
Series: HEXFET®
Input Capacitance (Ciss) @ Vds: 350pF @ 25V
Packaging: Tube
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Drain to Source Voltage (Vdss): 55V
Manufacturer: International Rectifier
Power - Max: 3.8W
Supplier Device Package: TO-262
Rds On (Max) @ Id, Vgs: 175 mOhm @ 7.2A, 10V


Parameters:

Technical/Catalog InformationIRF9Z24NLPBF
VendorInternational Rectifier
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityP-Channel
Drain to Source Voltage (Vdss)55V
Current - Continuous Drain (Id) @ 25° C12A
Rds On (Max) @ Id, Vgs175 mOhm @ 7.2A, 10V
Input Capacitance (Ciss) @ Vds 350pF @ 25V
Power - Max3.8W
PackagingTube
Gate Charge (Qg) @ Vgs19nC @ 10V
Package / CaseTO-262-3 (Straight Leads)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IRF9Z24NLPBF
IRF9Z24NLPBF



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Transformers
TM-09210
BV222-1-00992
Tapes, Adhesives
803
AC452-2
Test Equipment
TOP853
TOP2005
Relays
WIMA MKP4 0.22UF 630V
WIMA MKP4 4.7UF 630VDC
Industrial Controls, Meters
SGDM-15ADA
41AA1600E
Connectors, Interconnects
ASP-134488-01
WM4078-ND
View more