IRF9Z30PBF

Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Packaging : Tube
Continuous Drain Current : 18 A
Package / Case : TO-220AB
Drain-Source Breakdown Voltage : 50 V
Resistance Drain-Source RDS (on) : 140 mOhms


Features:

·P-Channel Verasatility
·Compact Plastic Package
·Fast Switching
·Low Drive Current
·Ease of Paralleling
·Excellent Temperature Stability
·Lead-Free


Specifications

	Parameter	Max.	Units
VDS	Drain-Source Voltage	20	V
VDGR	Drain-to-Gate Voltage (RGS =20K)	-50	V
VGS	Gate-to-Source Voltage	±20	A
ID @ Tc = 25	Continuous Drain Current, VGS	-18
ID @ Tc = 100	Continuous Drain Current, VGS	-11
IDM	Pulsed Drain Current	-60
PD @Tc= 25	C Max. Power Dissipation	74	W
	Linear Derating Factor	0.59	W
ILM	Inductive Current, Clamped (L= 100H) See Fig. 14	-60	A
IL	Unclamped Inductive Current(Avalanche Current)  See Fig. 15	-3.1
TJ TSTG	Operating Junction and Storage Temperature Range	-55 to + 150

Description

The HEXFET^® technology IRF9Z30PbF is the key to International Rectifier's advanced line of power MOSFET transistors. The efficient geometry and unique processing of the HEXFET design achieve very low on-state resistence combined with high transconductance and extreme device ruggedness.

The P-Channel HEXFETs IRF9Z30PbF are designed for applications which require the convenience of reverse polarity operation. They retain all of the features of the more common N-Channel HEXFETs such as voltage control, very fast switching, ease of paralleling, and excellent temperature stability.

P-Channel HEXFETs IRF9Z30PbF are intended for use in power stages where complementary symmetry with N-Channel devices offers circuit simplification. They are also very useful in drive stages because of the circuit versatility offered by the reverse polarity connection. Applications include motor control, audio amplifiers, switched mode converters, control circuit and pulse amplifiers.