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MFG:IR  Package Cooled:05+  D/C:TO-262  

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Part Number: IRF9Z34NL

 

MFG: IR

Package Cooled: 05+

D/C: TO-262

Description: Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low o...


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IRF9Z34NL General Description


Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.

The through-hole version (IRF9Z34NL) is available for lowprofile applications.

IRF9Z34NL Maximum Ratings

  Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ -10V -19 A
ID @ TC = 100°C Continuous Drain Current, VGS @ -10V -14
IDM Pulsed Drain Current -68
PD @TA = 25°C Power Dissipation 3.8 W
PD @TC = 25°C Power Dissipation 68
 W
  Linear Derating Factor 0.45 W/
VGS Gate-to-Source Voltage ± 20 V
EAS Single Pulse Avalanche Energy 180 mJ
IAR Avalanche Current -10 A
EAR Repetitive Avalanche Energy 6.8 mJ
dv/dt Peak Diode Recovery dv/dt -5.0 V/ns
TJ
TSTG		 Operating Junction and
Storage Temperature Range		 -55 to + 175
  Soldering Temperature, for 10 seconds 300 (1.6mm from case )

IRF9Z34NL Features

`Advanced Process Technology
`Surface Mount (IRF9Z34NS)
`Low-profile through-hole (IRF9Z34NL)
`175 Operating Temperature
`Fast Switching
`P-Channel
`Fully Avalanche Rated

IRF9Z34NL datasheet

IRF9Z34NL
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