Purchase IRF9Z34NS, In-stock IRF9Z34NS From SeekIC.
Part Number: IRF9Z34NS
Description: Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low o...
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IRF9Z34NS
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DataSheet
General Description
IRF9Z34NS General Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.
The through-hole version (IRF9Z34NL) is available for lowprofile applications.
IRF9Z34NS Maximum Ratings
| Parameter | Max. | Units | |
| ID @ TC = 25°C | Continuous Drain Current, VGS @ -10V | -19 | A |
| ID @ TC = 100°C | Continuous Drain Current, VGS @ -10V | -14 | |
| IDM | Pulsed Drain Current | -68 | |
| PD @TA = 25°C | Power Dissipation | 3.8 | W |
| PD @TC = 25°C | Power Dissipation | 68 |
W |
| Linear Derating Factor | 0.45 | W/ | |
| VGS | Gate-to-Source Voltage | ± 20 | V |
| EAS | Single Pulse Avalanche Energy | 180 | mJ |
| IAR | Avalanche Current | -10 | A |
| EAR | Repetitive Avalanche Energy | 6.8 | mJ |
| dv/dt | Peak Diode Recovery dv/dt | -5.0 | V/ns |
| TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to + 175 | |
| Soldering Temperature, for 10 seconds | 300 (1.6mm from case ) |
IRF9Z34NS Features
`Advanced Process Technology
`Surface Mount (IRF9Z34NS)
`Low-profile through-hole (IRF9Z34NL)
`175 Operating Temperature
`Fast Switching
`P-Channel
`Fully Avalanche Rated
`Surface Mount (IRF9Z34NS)
`Low-profile through-hole (IRF9Z34NL)
`175 Operating Temperature
`Fast Switching
`P-Channel
`Fully Avalanche Rated
IRF9Z34NS
PDF/DataSheet Download
- Datasheet: IRF9Z34NS
- File Size: 166191 KB
- Manufacturer: IRF [International Rectifier]
- Click here to Download
- ·IRF034
- IRF [International Rectifier]
- REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE)
- 147521 KB
- ·IRF044
- SEME-LAB [Seme LAB]
- N-CHANNEL POWER MOSFET
- 22513 KB
- ·IRF044SMD
- SEME-LAB [Seme LAB]
- N-CHANNEL POWER MOSFET
- 21905 KB
- ·IRF054
- IRF [International Rectifier]
- REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE)
- 149688 KB
- ·IRF054SMD
- SEME-LAB [Seme LAB]
- N-CHANNEL POWER MOSFET
- 23141 KB
- ·IRF100
- ETC [ETC]
- 50W to 500W HIGH POWER WIRE WOUND RESISTORS FLAT SHAPED ALUMINUM HOUSED
- 86902 KB
- ·IRF101
- FAIRCHILD [Fairchild Semiconductor]
- N-Channel Power MOSFETs, 27 A, 60-100V
- 149859 KB
- ·IRF1010E
- IRF [International Rectifier]
- Power MOSFET(Vdss=60V,Rds(on)=12mohm,Id=84A
- 200209 KB
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IRF9Z34NL
Fifth Generation HEXFETs IRF9Z34NL from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Powe...
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IRF9Z34N
Fifth Generation HEXFETs IRF9Z34Nfrom International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power ...
IRF9Z34L
Third Generation HEXFETs IRF9Z34L from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power...
IRF9Z34, SiHF9Z34
Power MOSFET IRF9Z34, SiHF9Z34
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