MFG:IR Package Cooled:TO-263 D/C:09+
MFG: IR
Package Cooled: TO-263
D/C: 09+
Description: Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely lo...
Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.
The through-hole version (IRF9Z34L) is available for lowprofile applications.
| Parameter | Max. | Units | |
| ID @ TC = 25°C | Continuous Drain Current, VGS @ 10V | -18 | A |
| ID @ TC = 100°C | Continuous Drain Current, VGS @ 10V | -13 | |
| IDM | Pulsed Drain Current | -72 | |
| PD @TA = 25°C | Power Dissipation | 3.7 | W |
| PD @TC = 25°C | Power Dissipation | 88 |
W |
| Linear Derating Factor | 0.59 | W/ | |
| VGS | Gate-to-Source Voltage | ± 20 | V |
| EAS | Single Pulse Avalanche Energy | 370 | mJ |
| IAR | Avalanche Current | -18 | A |
| EAR | Repetitive Avalanche Energy | 8.8 | mJ |
| dv/dt | Peak Diode Recovery dv/dt | -4.5 | V/ns |
| TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to + 175 | |
| Soldering Temperature, for 10 seconds | 300 (1.6mm from case ) |
IRF9Z34S
PDF/DataSheet Download
MOSFET P-CH 55V 19A D2PAK
MOSFET P-CH 55V 19A D2PAK
MOSFET P-CH 55V 19A D2PAK
MOSFET P-CH 55V 19A D2PAK
Fifth Generation HEXFETs IRF9Z34NS from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Powe...
MOSFET P-CH 55V 19A TO-220AB
Price: 0.1-10 USD
high density mounting phototransistor, DIP16, 70mW, 50mA, 6V
Price: 10-15 USD
power transistor module, 600V, 75A
Price: 0.5-1 USD
SOT23-5, temperature sensor, comparator, low-power
Price: 100-120 USD
NL6448AC3310 NEC LCD DOT MATRIX GRAPHIC DISPLAY
Price: 0.5-0.6 USD
potentiometer, SOP-8, –1V to +7V, 3-wire serial interface, ±1mA
Price: 8.5-9.5 USD
digital-to-analog converter, –0.3V to +11V, SSOP20, low power, unipolar or bipolar operation
Price: 2.75-3 USD
8-Bit, single-Chip Hmos microcomputer, DIP40, 0.5 to 7.0V, 1.0W, Two single level interrupts
Price: 1.6-3 USD
stepper motor driver, 5mA, DIP-22
Price: 1-2 USD
CC1029, TO-247, APT
Price: 8-10 USD
FBGA, MT41J128M16HA-15E, Micron Technology, –0.4 to 1.975 V, Multipurpose register, Output driver ...
Price: 1-2 USD
SM8952AC25J
Price: 0.2-0.3 USD
Electrically Erasable PROM, SOP, 1K-bit, 6.5V, Low power CMOS technology
