The IRFC240 has some electrical characteristics (wafer form).When parameter is V(BR)DSS,the description is drain-to-source breakdown voltage,the guaranteed (Min/Max) is 200V Min.,the test conditions is VGS=0V,ID=100A.When parameter is RDS(on),the description...
The features of IRFC150R are: (1)fast switching times; (2)low RDS(on) HDMOS TM process; (3)rugged polysilicon gate cell structure; (4)excellent high voltage stability; (5)low input capacitance; (6)improved high temperature reliability.
The electrical charac...
The IRFC1404 has some electrical characteristics (wafer form).When parameter is V(BR)DSS,the description is drain-to-source breakdown voltage,the guaranteed (Min/Max) is 40V Min.,the test conditions is VGS=0V,ID=250A.When parameter is RDS(on),the description...
The IRFC044 has some electrical characteristics (wafer form).When parameter is V(BR)DSS,the description is drain-to-source breakdown voltage,the guaranteed (Min/Max) is 60V Min.,the test conditions is VGS=0V,ID=100A.When parameter is RDS(on),the description ...