IRFC43N50KB

The IRFC43N50KB has some electrical characteristics (wafer form).When parameter is V(BR)DSS,the description is drain-to-source breakdown voltage,the guaranteed (Min/Max) is 500V Min.,the test conditions is VGS=0V,ID=250A.When parameter is RDS(on),the description is static drain-to-source on-resistance,the guaranteed (Min/Max) is 0.090Max.,the test conditions is VGS=10V,ID=28A.When parameter is VGS(th),the description is gate threshold voltage,the guaranteed (Min/Max) is 3.0V Min.,5.0V Max.,the test conditions is VDS=VGS,ID=250A.When parameter is IDSS,the description is drain-to-source leakage current,the guaranteed (Min/Max) is 50A Max.,the test conditions is VDS=500V,VGS=0V,TJ=25.When parameter is IGSS,the description is gate-to-source leakage,the guaranteed (Min/Max) is ±100nA Max.,the test conditions is VGS=±30V.When parameter is TJ,TSTG,the description is operating junction and storage temperature range,the guaranteed (Min/Max) is -55 to 150 Max.

The IRFC43N50KB has some mechanical data.The nominal back metal composition,thickness is Cr-NiV-Ag ( 0.1m-0.2m-0.5m ).The nominal front metal composition,thickness is Al with 1% Si (0.004 mm).The chip dimensions is 0.315" x 0.470" [ 8.00 mm x 11.94 mm ].The wafer diameter is 150 mm.The wafer thickness is 0.375 mm ± 0.025 mm.The relevant die mechanical dwg. number is 01-5444.The minimum street width is 0.004mm.The reject ink dot size is 0.51 mm diameter minimum.The recommended storage environment is storage in original container, in dessicated nitrogen, with no contamination.The recommended die attach conditions is for optimum electrical results, die attach temperature should not exceed 300.