Purchase IRFE430, In-stock IRFE430 From SeekIC.
MFG:IR Package Cooled:18-pin LCC D/C:05+
- Table of contents:
IRFE430
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Suppliers
DataSheet
General Description
IRFE430 Maximum Ratings
| Parameter | Max. | Units | |
| EAS | Single Pulse Avalanche Energy ➁ | 0.31 | mJ |
| VGS | Gate-to-Source Voltage | ± 20 | V |
| ID @ TC = 25°C | Continuous Drain Current, VGS @ 10V | 2.5 | A |
| ID @ TA = 70°C | Continuous Drain Current, VGS @ 10V | 1.5 | A |
| IDM | Pulsed Drain Current | 11 | A |
| PD @TC = 25°C | Power Power Dissipation | 25 | W |
| Linear Derating Factor | 0.20 | W/K | |
| dv/dt | Peak Diode Recovery dv/dt | 6.2 | V/nS |
| TJ, TSTG | Junction and Storage Temperature Range | -55 to + 150 | °C |
| Surface Temperature | 300 ( for 5 seconds) | °C | |
| Weight | 0.42 (typical) | g |
IRFE430 Features
· Hermetically Sealed
· Simple Drive Requirements
· Ease of Paralleling
· Small footprint
· Surface Mount
· Lightweight
· Simple Drive Requirements
· Ease of Paralleling
· Small footprint
· Surface Mount
· Lightweight
irfe430
PDF/DataSheet Download
- Datasheet: irfe430
- File Size: 132226 KB
- Manufacturer: IRF [International Rectifier]
- Click here to Download
- ·IRF034
- IRF [International Rectifier]
- REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE)
- 147521 KB
- ·IRF044
- SEME-LAB [Seme LAB]
- N-CHANNEL POWER MOSFET
- 22513 KB
- ·IRF044SMD
- SEME-LAB [Seme LAB]
- N-CHANNEL POWER MOSFET
- 21905 KB
- ·IRF054
- IRF [International Rectifier]
- REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE)
- 149688 KB
- ·IRF054SMD
- SEME-LAB [Seme LAB]
- N-CHANNEL POWER MOSFET
- 23141 KB
- ·IRF100
- ETC [ETC]
- 50W to 500W HIGH POWER WIRE WOUND RESISTORS FLAT SHAPED ALUMINUM HOUSED
- 86902 KB
- ·IRF101
- FAIRCHILD [Fairchild Semiconductor]
- N-Channel Power MOSFETs, 27 A, 60-100V
- 149859 KB
- ·IRF1010E
- IRF [International Rectifier]
- Power MOSFET(Vdss=60V,Rds(on)=12mohm,Id=84A
- 200209 KB
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