IRFI2807

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Vgs(th) (Max) @ Id: 4V @ 250µA
Series: HEXFET®
Current - Continuous Drain (Id) @ 25° C: 40A
Power - Max: 48W
Packaging: Tube
Mounting Type: Through Hole
Drain to Source Voltage (Vdss): 75V
Gate Charge (Qg) @ Vgs: 150nC @ 10V
Package / Case: TO-220-3 Full Pack
Input Capacitance (Ciss) @ Vds: 3400pF @ 25V
Manufacturer: International Rectifier
Rds On (Max) @ Id, Vgs: 13 mOhm @ 43A, 10V
Supplier Device Package: TO-220AB Full-Pak


Parameters:

Technical/Catalog Information	IRFI2807
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	75V
Current - Continuous Drain (Id) @ 25° C	40A
Rds On (Max) @ Id, Vgs	13 mOhm @ 43A, 10V
Input Capacitance (Ciss) @ Vds	3400pF @ 25V
Power - Max	48W
Packaging	Tube
Gate Charge (Qg) @ Vgs	150nC @ 10V
Package / Case	TO-220-3 Fullpak (Straight Leads)
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	IRFI2807 IRFI2807