IRFI740B

Features: • 10A, 400V, RDS(on) = 0.54Ω @VGS = 10 V• Low gate charge ( typical 41 nC)• Low Crss ( typical 35 pF)• Fast switching• 100% avalanche tested• Improved dv/dt capabilitySpecifications Symbol Parameter IRFW740B / IRFI740B Unit VDSS ...

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SeekIC No. : 004377119 Detail

IRFI740B: Features: • 10A, 400V, RDS(on) = 0.54Ω @VGS = 10 V• Low gate charge ( typical 41 nC)• Low Crss ( typical 35 pF)• Fast switching• 100% avalanche tested• Impr...

floor Price/Ceiling Price

Part Number:
IRFI740B
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/27

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Product Details

Description



Features:

• 10A, 400V, RDS(on) = 0.54Ω @VGS = 10 V
• Low gate charge ( typical 41 nC)
• Low Crss ( typical 35 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability



Specifications

Symbol Parameter IRFW740B / IRFI740B Unit

VDSS

Drain-Source Voltage

400 V

ID

Drain Current    - Continuous (TC = 25°C)
                         - Continuous (TC = 100°C)

10

A

 6.3

 A

IDM

Drain Current    - Pulsed                                 (Note 1)

40 A
VGSS Gate-Source Voltage ± 30 V

EAS

Single Pulsed Avalanche Energy                     (Note 2) 450 mJ

IAR

Avalanche Current                                          (Note 1)

10

A

EAR

Repetitive Avalanche Energy                          (Note 1)

13.4

mJ

 dv/dt

 Peak Diode Recovery dv/dt                            (Note 3)

 5.5

 V/ns

PD

Power Dissipation (TA = 25°C) *


3.13

W

 Power Dissipation (TC = 25°C)
                              - Derate above 25°C

134

 W

1.08

 W/

TJ, Tstg

Operating and Storage Temperature Range

-55 to +150

TL

Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds

300




Description

These N-Channel enhancement mode power field effect transistors IRFI740B are produced using Fairchild's proprietary,planar, DMOS technology.

This advanced technology IRFI740B has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies and electronic lamp ballasts based on half bridge.




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