IRFIB7N50A

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 30 V
Package / Case : TO-220 Full-Pak
Continuous Drain Current : 6.6 A
Resistance Drain-Source RDS (on) : 0.52 Ohms


Application

·Switch Mode Power Supply ( SMPS )
·Uninterruptable Power Supply
·High speed power switching
·High Voltage Isolation = 2.5KV_RMS


Specifications

	Parameter	Max.	Units
ID @TC = 25°C	Continuous Drain Current, VGS @ 10V	6.6	A
ID @TC = 100°C	Continuous Drain Current, VGS @ 10V	4.2
IDM	Pulsed Drain Current	44
PD @TC = 25°C	Power Dissipation	60	W
	Linear Derating Factor	0.48	W/°C
VGS	Gate-to-Source Voltage	±30	V
dv/dt	Peak Diode Recovery dv/dt	6.9	V/ns
TJ TSTG	Operating Junction and Storage Temperature Range	-55 to + 150	°C
	Soldering Temperature, for 10 seconds	300 (1.6mm from case )
	Mounting Torque, 6-32 or M3 Screw	10 lbf•in (1.1 N•m)