MFG:IOR Package Cooled:T0223
MFG: IOR
Package Cooled: T0223
Description: Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achiev...
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The SOT-223 package is designed for surface-mount using vapor phase, infra red, or wave soldering techniques. Its unique package design allows for easy automatic pickand- place as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for heatsinking. Power dissipation of 1.0W is possible in a typical surface mount application.
| Parameter | Max. | Units | |
| ID @ TC = 25°C | Continuous Drain Current, VGS @ 10V** | 4.0 | A |
| ID @ TC = 25°C | Continuous Drain Current, VGS @ 10V* | 2.8 | A |
| ID @ TC = 70°C | Continuous Drain Current, VGS @ 10V* | 2.3 | A |
| IDM | Pulsed Drain Current | 11.2 | A |
| PD @TC = 25°C | Power Dissipation(PCB Mount)** | 2.1 | W |
| PD @TC = 25°C | Power Dissipation(PCB Mount)* | 1.0 | W |
| Linear Derating Factor(PCB Mount)* | 8.3 | W/°C | |
| VGS | Gate-to-Source Voltage | ± 20 | V |
| EAS | Single Pulse Avalanche Energy | 214 | mJ |
| IAR | Avalanche Current | 2.8 |
A |
| EAR | Repetitive Avalanche Energy * | 0.1 | mJ |
| dv/dt | Peak Diode Recovery dv/dt | 5.0 | V/ns |
| TJ | Operating Junction and | -55 to + 150 | °C |
| TSTG | Storage Temperature Range | -55 to + 150 | °C |
IRFL024N
PDF/DataSheet Download
The IRFL014PbF is designed as power MOSFET.It provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. It has seven features.The first one is that it would have surface mount.The s...
MOSFET N-CH 55V 1.9A SOT223
MOSFET N-CH 55V 1.9A SOT223
Fifth Generation HEXFET® MOSFETs IRFL014NPbFfrom International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design tha...
Fifth Generation HEXFET® MOSFETs IRFL014N from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that ...
Power MOSFET IRFL014, SiHFL014
Price: 0.06-0.07 USD
Hex inverting Schmitt-trigger, 5V tolerant input, Si-gate, CMOS
Price: 40-52 USD
single channel, power MOSFET optocouplers, DIP, Average Input Current 20mA
Price: 25-50 USD
silicon N channel IGBT, module, 600V, Low Saturation Voltage
Price: 9.5-11.5 USD
500V, 18A, Stud Thyristor
Price: 45-47 USD
Phase Control Thyristor Module, 1.65 V, 200 mA, 5 Nm
Price: 155-165 USD
Header, 14.0 A, 62POS, 600 V
Price: 2.5-3 USD
0.3ohm, 15pF, 2000Vrms, 16 pin SOIC, HALO, TG75-1406N
Price: 0.1-2 USD
9-bit video input processor, 44-QFP, 3 to 3.6V, 0.4W, SAA7113H
Price: 1.37-1.45 USD
128MBIT, 133MHZ, synchronous CMOS SDRAM, dynamic random-access memory, 2 Meg x 16 x 4 banks
Price: 1-2.5 USD
instrumentation amplifier, CDIP-14, 36 Volts, Thermocouple Failure Alarm
Price: 1.85-2.3 USD
DC-AC Inverter Control IC, SSOP-32, 36 V, 950 mW, Under Voltage Lock Out
Price: 2.1-2.5 USD
BH5510KV-E2 - System Motor Driver IC for Slim Drive (3 sensors) - Rohm
