Purchase IRFL024NPbF, In-stock IRFL024NPbF From SeekIC.
Part Number: IRFL024NPbF
Description: The IRFL024NPbF has 7 features.The first one is Surface Mount.The second one is advanced process techn...
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IRFL024NPbF
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DataSheet
General Description
IRFL024NPbF General Description
The IRFL024NPbF has 7 features.The first one is Surface Mount.The second one is advanced process technology.The third one is ultra low on-resistance.The fourth one is Fast Switching.The fifth one is Fully Avalanche Rated.The sixth one is Lead-Free.The last one is dynamic dv/dt rating.
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques.The straight lead version is for throughhole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.
The SOT-223 package is designed for surface-mount using vapor phase,infrared,or wave soldering techniques.Its unique package design allows for easy automatic pick-and-place as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for heatsinking. Power dissipation of 1.0W is possible in a typical surface mount application.
The IRFL024NPbF has some information about absolute maximum ratings.ID @ Tc =25 ,when parameter is continuous drain current,VGS @ 10V,the max is 4.0,the units is A.ID @ Tc =100 ,when parameter is continuous drain current,VGS @ 10V,the max is 2.8,the units is A.ID @ Tc =70 ,when parameter is continuous drain current,VGS @ 10V,the max is 2.3,the units is A.IDM,when parameter is pulsed drain current,the max is 11.2,the units is A.PD @ TA = 25,when parameter is power dissipation,the max is 2.1,the units is W.PD @ TA = 25,when parameter is power dissipation,the max is 1.0,the units is W.When parameter is linear derating factor,the max is 8.3,the units is W/.VGS,when parameter is Gate-to-Source Voltage,the max is ±20,the units is V.EAS,when parameter is Single Pulse Avalanche Energy,the max is 214,the units is mJ.IAR,when parameter is Avalanche Current,the max is 2.8,the units is A.EAR,when parameter is Repetitive Avalanche Energy,the max is 0.1,the units is mJ.dv/dt,when parameter is Peak Diode Recovery dv/dt,the max is 5.0,the units is V/ns.TJ and TSTG,when parameter is Operating Junction and Storage Temperature Range,the max is -55 to + 150,the units is °C.
IRFL024NPbF Maximum Ratings
IRFL024NPbF Features
IRF034
PDF/DataSheet Download
- Datasheet: IRF034
- File Size: 147521 KB
- Manufacturer: IRF [International Rectifier]
- Click here to Download
- ·IRF044
- SEME-LAB [Seme LAB]
- N-CHANNEL POWER MOSFET
- 22513 KB
- ·IRF044SMD
- SEME-LAB [Seme LAB]
- N-CHANNEL POWER MOSFET
- 21905 KB
- ·IRF054
- IRF [International Rectifier]
- REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE)
- 149688 KB
- ·IRF054SMD
- SEME-LAB [Seme LAB]
- N-CHANNEL POWER MOSFET
- 23141 KB
- ·IRF100
- ETC [ETC]
- 50W to 500W HIGH POWER WIRE WOUND RESISTORS FLAT SHAPED ALUMINUM HOUSED
- 86902 KB
- ·IRF101
- FAIRCHILD [Fairchild Semiconductor]
- N-Channel Power MOSFETs, 27 A, 60-100V
- 149859 KB
- ·IRF1010E
- IRF [International Rectifier]
- Power MOSFET(Vdss=60V,Rds(on)=12mohm,Id=84A
- 200209 KB
- ·IRF1010EL
- IRF [International Rectifier]
- Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=84A)
- 126916 KB
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