Purchase IRFL024ZPbF, In-stock IRFL024ZPbF From SeekIC.
D/C:7100
Part Number: IRFL024ZPbF
D/C: 7100
Description: Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest p...
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IRFL024ZPbF
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DataSheet
General Description
IRFL024ZPbF General Description
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
IRFL024ZPbF Maximum Ratings
| Parameter | Max. | Units | |
| ID @ TA = 25 | Continuous Drain Current, VGS @ 10V (Silicon Limited) | 5.1 | A |
| ID @ TA = 70 | Continuous Drain Current, VGS @ 10V | 4.1 | |
| IDM | Pulsed Drain Current | 41 | |
| PD @TA = 25 | Power Dissipation | 2.8 | |
| PD @TA = 25 | Power Dissipation | 1.0 | W |
| Linear Derating Factor | 0.02 | W/ | |
| VGS | Gate-to-Source Voltage | ± 20 | V |
| E AS (Thermally limited) | Single Pulse Avalanche Energy | 13 | mJ |
| E AS (Tested ) | Single Pulse Avalanche Energy Tested Value | 32 | |
| IAR | Avalanche Current | See Fig.12a, 12b, 15, 16 | A |
| EAR | Repetitive Avalanche Energy | mJ | |
| T J TSTG |
Operating Junction and Storage Temperature Range | -55 to + 150 |
IRFL024ZPbF Features
· Advanced Process Technology
· Ultra Low On-Resistance
· 150°C Operating Temperature
· Fast Switching
· Repetitive Avalanche Allowed up to Tjmax
· Lead-Free
· Ultra Low On-Resistance
· 150°C Operating Temperature
· Fast Switching
· Repetitive Avalanche Allowed up to Tjmax
· Lead-Free
IRFL024ZPBF
PDF/DataSheet Download
- Datasheet: IRFL024ZPBF
- File Size: 198669 KB
- Manufacturer: IRF [International Rectifier]
- Click here to Download
- ·IRF034
- IRF [International Rectifier]
- REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE)
- 147521 KB
- ·IRF044
- SEME-LAB [Seme LAB]
- N-CHANNEL POWER MOSFET
- 22513 KB
- ·IRF044SMD
- SEME-LAB [Seme LAB]
- N-CHANNEL POWER MOSFET
- 21905 KB
- ·IRF054
- IRF [International Rectifier]
- REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE)
- 149688 KB
- ·IRF054SMD
- SEME-LAB [Seme LAB]
- N-CHANNEL POWER MOSFET
- 23141 KB
- ·IRF100
- ETC [ETC]
- 50W to 500W HIGH POWER WIRE WOUND RESISTORS FLAT SHAPED ALUMINUM HOUSED
- 86902 KB
- ·IRF101
- FAIRCHILD [Fairchild Semiconductor]
- N-Channel Power MOSFETs, 27 A, 60-100V
- 149859 KB
- ·IRF1010E
- IRF [International Rectifier]
- Power MOSFET(Vdss=60V,Rds(on)=12mohm,Id=84A
- 200209 KB
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