MFG:IR Package Cooled:SOT-223 D/C:09+
MFG: IR
Package Cooled: SOT-223
D/C: 09+
Description: Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achiev...
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit,combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The SOT-223 package is designed for surface-mount using vapor phase, infra red, or wave soldering techniques. Its unique package design allows for easy automatic pick-and-place as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for heatsinking. Power dissipation of 1.0W is possible in a typical surface mount application.
|
Parameter |
Max. |
Units | |
|
ID @ TA = 25°C |
Continuous Drain Current, VGS @ 10V** |
2.3 |
A |
|
ID @ TA = 25°C |
Continuous Drain Current, VGS @ 10V* |
1.6 | |
|
ID @ TA = 70°C |
Continuous Drain Current, VGS @ 10V* |
1.3 | |
|
IDM |
Pulsed Drain Current |
6.4 | |
|
PD @TA = 25°C |
Power Dissipation (PCB Mount)** |
2.1 |
W |
|
PD @TA = 25°C |
Power Dissipation (PCB Mount)* |
1.0 |
W |
| Linear Derating Factor (PCB Mount)* |
8.3 |
mW/°C | |
|
VGS |
Gate-to-Source Voltage |
± 20 |
V |
|
EAS |
Single Pulse Avalanche Energy‚ |
54 |
mJ |
|
IAR |
Avalanche Current |
1.6 |
A |
|
EAR |
Repetitive Avalanche Energy* |
0.1 |
mJ |
|
dv/dt |
Peak Diode Recovery dv/dt ƒƒ |
5.0 |
V/ns |
|
TJ, TSTG |
Junction and Storage Temperature Range |
-55 to + 150 |
°C |
IRFL1006
PDF/DataSheet Download
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