Transistor Polarity
: N-Channel
Gate-Source Breakdown Voltage
: +/- 20 V
Mounting Style
: SMD/SMT
Drain-Source Breakdown Voltage
: 100 V
Maximum Operating Temperature
: + 150 C
Packaging
: Tube
Resistance Drain-Source RDS (on)
: 0.54 Ohms
Continuous Drain Current
: 1.5 A
Package / Case
: SOT-223
Configuration
: Single Dual Drain
Features: · Surface Mount
· Available in Tape & Reel
· Dynamic dv/dt Rating
· Repetitive Avalanche Rated
· Fast Switching
· Ease of Paralleling
· Simple Drive Requirements
· Lead-FreeSpecifications
| |
Parameter |
Max. |
Units |
| ID @ TC = 25 |
Continuous Drain Current, VGS @ 10V |
1.5 |
A |
| ID @ TC = 100 |
Continuous Drain Current, VGS @ 10V |
0.96 |
| IDM |
Pulsed Drain Current |
12 |
| PD @TC = 25 |
Power Dissipation |
3.1 |
W |
| PD @TA = 25 |
Power Dissipation (PCB Mount)** |
2.0 |
| |
Linear Derating Factor |
0.025 |
W/ |
| |
Linear Derating Factor (PCB Mount)** |
0.017 |
| VGS |
Diode Maximum Forward Current |
±20 |
V |
| EAS |
Single Pulse Avalanche Energy |
150 |
mJ |
| IAR |
Avalanche Current |
1.5 |
A |
| EAR |
Repetitive Avalanche Energy |
0.31 |
mJ |
| dv/dt |
Peak Diode Recovery dv/dt |
5.5 |
V/ns |
TJ
TSTG |
Operating Junction and
Storage Temperature Range |
-55 to + 150 |
|
| |
Soldering Temperature, for 10 seconds |
300 (1.6mm from case ) |
DescriptionThird Generation HEXFETs IRFL110PbF from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The SOT-223 package IRFL110PbF is designed for surface-mount using vapor phase, infra red, or wave soldering techniques. Its unique package design allows for easy automatic pick-andplace as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for heatsinking. Power dissipation of grreater than 1.25W is possible in a typical surface mount application.
IRFL110PBF Data Sheet
