Third Generation HEXFETs of the IRFL110from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.The SOT-223 package of the IRFL110is designed for surface...
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit,combined with the fast switching speed and ruggedized device design of the IRFL1006that HEXFET ...