Transistor Polarity
: N-Channel
Mounting Style
: SMD/SMT
Maximum Operating Temperature
: + 150 C
Packaging
: Tube
Gate-Source Breakdown Voltage
: 20 V
Drain-Source Breakdown Voltage
: 55 V
Package / Case
: SOT-223
Configuration
: Single Dual Drain
Continuous Drain Current
: 3.7 A
Resistance Drain-Source RDS (on)
: 45 m Ohms
Features: · Surface Mount
· Advanced Process Technology
· Ultra Low On-Resistance
· Dynamic dv/dt Rating
· Fast Switching
· Fully Avalanche Rated
· Lead-FreeSpecifications
|
Characteristics |
|
Max. |
Unit |
| Continuous Drain Current, VGS @ 10V |
ID @ TA = 25 |
5.2 |
A |
| Continuous Drain Current, VGS @ 10V |
ID @ TA = 25 |
3.7 |
A |
| Continuous Drain Current, VGS @ 10V |
ID @ TA = 70 |
3.0 |
A |
| Pulsed Drain Current |
IDM |
30 |
A |
| Power Dissipation (PCB Mount) |
PD @TA = 25 |
2.1 |
W |
| Power Dissipation (PCB Mount) |
PD @TA = 25 |
1.0 |
W |
| Linear Derating Factor (PCB Mount)* |
|
8.3 |
mW/ |
| Gate-to-Source Voltage |
VGS |
±20 |
V |
| Single Pulse Avalanche Energy |
EAS |
110 |
mJ |
| Avalanche Current |
IAR |
3.7 |
A |
| Repetitive Avalanche Energy |
EAR |
0.10 |
mJ |
| Peak Diode Recovery dv/dt |
dv/dt |
5.0 |
V/ns |
| Junction and Storage Temperature Range |
Tj,Tstg |
−55~150 |
|
DescriptionFifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The SOT-223 package of the IRFL4105PbF is designed for surface-mount using vapor phase, infra red, or wave soldering techniques.Its unique package design allows for easy automatic pickand- place as with other SOT or SOIC packages but of the IRFL4105PbF has the added advantage of improved thermal performance due to an enlarged tab for heatsinking. Power dissipation of 1.0W is possible in a typical surface mount application.
Parameters: | Technical/Catalog Information | IRFL4105PBF |
| Vendor | International Rectifier |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 55V |
| Current - Continuous Drain (Id) @ 25° C | 3.7A |
| Rds On (Max) @ Id, Vgs | 45 mOhm @ 3.7A, 10V |
| Input Capacitance (Ciss) @ Vds | 660pF @ 25V |
| Power - Max | 2.1W |
| Packaging | Bulk |
| Gate Charge (Qg) @ Vgs | 35nC @ 10V |
| Package / Case | SOT-223, SC-73, TO-261 (3 Leads + Tab) |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IRFL4105PBF
IRFL4105PBF
|
IRFL4105PBF Data Sheet
