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IRFL4310

MOSFET N-CH 100V 1.6A SOT223

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SeekIC No. : 004377176 Detail

IRFL4310: MOSFET N-CH 100V 1.6A SOT223

IRFL4310 Data Sheet

floor Price/Ceiling Price

US $ 3.55~3.55 / Piece | Get Latest Price
Part Number:
IRFL4310
Mfg:
International Rectifier
Supply Ability:
5000

Price Break

  • Qty
  • 1~640
  • Unit Price
  • $3.55
  • Processing time
  • 15 Days
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Total Cost: $ 0.00

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Product Details

Description



Specifications

Parameter
Max.
Units
ID @ TA = 25°C
 Continuous Drain Current, VGS @ 10V**
2.2
A
ID @ TA = 25°C
 Continuous Drain Current, VGS @ 10V*
1.6
ID @ TA = 70°C
 Continuous Drain Current, VGS @ 10V*
1.3
IDM
 Pulsed Drain Current 
13
PD @TA = 25°C
 Power Dissipation (PCB Mount)**
2.1
W
PD @TA = 25°C
 Power Dissipation (PCB Mount)*
1.0
W
 Linear Derating Factor (PCB Mount)*
8.3
mW/°C
VGS
 Gate-to-Source Voltage
± 20
V
EAS
 Single Pulse Avalanche Energy‚
47
mJ
IAR
 Avalanche Current
1.6
A
EAR
 Repetitive Avalanche Energy*
0.10
mJ
dv/dt
 Peak Diode Recovery dv/dt ƒ
5.0
V/ns
TJ, TSTG
 Junction and Storage Temperature Range
55 to + 150
°C



Description

Fifth Generation HEXFETs of the IRFL4310 from International Rectifier utilize advanced processing techniques to achieve extremely low  on-resistance per silicon area.  This benefit,combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The SOT-223 package of the IRFL4310 is designed for surface-mount using vapor phase, infra red, or wave soldering techniques. Its unique package design allows for easy automatic pick-and-place as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for heatsinking.  Power dissipation of 1.0W is possible in a typical surface mount application.




Parameters:

Technical/Catalog InformationIRFL4310
VendorInternational Rectifier
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25° C1.6A
Rds On (Max) @ Id, Vgs200 mOhm @ 1.6A, 10V
Input Capacitance (Ciss) @ Vds 330pF @ 25V
Power - Max2.1W
PackagingBulk
Gate Charge (Qg) @ Vgs25nC @ 10V
Package / CaseSOT-223, SC-73, TO-261 (3 Leads + Tab)
FET FeatureStandard
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names IRFL4310
IRFL4310



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