MFG:IR Package Cooled:2007+
MFG: IR
Package Cooled: 2007+
Description: Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achiev...
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit,combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The SOT-223 package is designed for surface-mount using vapor phase, infra red, or wave soldering techniques.Its unique package design allows for easy automatic pick-and-place as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for heatsinking. Power dissipation of 1.0W is possible in a typical surface mount application.
|
Parameter |
Max. |
Units | |
|
ID @ TA=25 |
Continuous Drain Curren VGS@ 10V*** |
2.2 |
A |
|
ID @ TA=25 |
Continuous Drain Curren VGS@ 10V** |
1.6 | |
|
ID @ TA=100 |
Continuous Drain Curren VGS@ 10V* |
1.3 | |
|
IDM |
Pulsed Drain Current |
13 | |
|
PD@ TA= 25 |
CPower Dissipation (PCB Mount)** |
2.1 |
W |
|
PD@ TA= 25 |
Power Dissipatio(PCB Mount)* |
1.0 |
W |
| Linear Derating Factor |
8.3 |
W/ | |
|
VGS |
Gate-to-Source Voltage |
±20 |
V |
|
EAS |
Single Pulse Avalanche Energy |
47 |
mJ |
|
IAR |
Avalanche Current |
1.6 |
A |
|
EAR |
Repetitive Avalanche Energy |
0.10 |
mJ |
|
dv/dt |
Peak Diode Recovery dv/dt |
5.0 |
V/nS |
|
TJ,TSTG |
Junction and Storage Temperature Range |
-55 to 150 |
IRF034
PDF/DataSheet Download
Fifth Generation HEXFETs of the IRFL4310from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit,combined with the fast switching speed and ruggedized device design that HEXFET ...
MOSFET N-CH 55V 3.7A SOT223
MOSFET N-CH 55V 3.7A SOT223
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs ...
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit,combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs a...
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