MFG:International Rectifier (VA) Category:Discrete Semiconductor Products
Category: Discrete Semiconductor Products
MFG: International Rectifier (VA)
Descriptions: MOSFET N-CH 100V 1.6A SOT223
| Technical/Catalog Information | IRFL4310TR |
| Vendor | International Rectifier (VA) |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25° C | 1.6A |
| Rds On (Max) @ Id, Vgs | 200 mOhm @ 1.6A, 10V |
| Input Capacitance (Ciss) @ Vds | 330pF @ 25V |
| Power - Max | 1W |
| Packaging | Cut Tape (CT) |
| Gate Charge (Qg) @ Vgs | 25nC @ 10V |
| Package / Case | SOT-223, SC-73, TO-261 (3 Leads + Tab) |
| FET Feature | Logic Level Gate |
| Drawing Number | * |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | IRFL4310TR IRFL4310TR IRFL4310CT ND IRFL4310CTND IRFL4310CT |
IRF034
PDF/DataSheet Download
Fifth Generation HEXFETs from International Rectifier IRFL4310PbF utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit,combined with the fast switching speed and ruggedized device design that HEXFET Pow...
Fifth Generation HEXFETs of the IRFL4310from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit,combined with the fast switching speed and ruggedized device design that HEXFET ...
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Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs ...
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