IRFL4315

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Current - Continuous Drain (Id) @ 25° C: 2.6A
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
FET Feature: Standard
Power - Max: 2.8W
Gate Charge (Qg) @ Vgs: 19nC @ 10V
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223
Series: HEXFET®
Drain to Source Voltage (Vdss): 150V
Packaging: Tube
Vgs(th) (Max) @ Id: 5V @ 250µA
Manufacturer: International Rectifier
Rds On (Max) @ Id, Vgs: 185 mOhm @ 1.6A, 10V
Input Capacitance (Ciss) @ Vds: 420pF @ 25V


Application

High frequency DC-DC converters


Specifications

	Parameter	Max.	Units
ID @ TA = 25°C	Continuous Drain Current, VGS @ 10V	2.6	A
ID @ TA = 70°C	Continuous Drain Current, VGS @ 10V	2.1
IDM	Pulsed Drain Current	21
PD @TA = 25°C	Power Dissipation	2.8	W
	Linear Derating Factor	0.02	W/°C
VGS	Gate-to-Source Voltage	± 30	V
dv/dt	Peak Diode Recovery dv/dt	6.3	V/ns
TJ TSTG	Operating Junction and Storage Temperature Range	-55 to + 150	°C
	Soldering Temperature, for 10 seconds	300 (1.6mm from case )

Parameters:

Technical/Catalog Information	IRFL4315
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	150V
Current - Continuous Drain (Id) @ 25° C	2.6A
Rds On (Max) @ Id, Vgs	185 mOhm @ 1.6A, 10V
Input Capacitance (Ciss) @ Vds	420pF @ 25V
Power - Max	2.8W
Packaging	Tube
Gate Charge (Qg) @ Vgs	19nC @ 10V
Package / Case	SOT-223, SC-73, TO-261 (3 Leads + Tab)
FET Feature	Standard
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	IRFL4315 IRFL4315