MFG:IOR Package Cooled:TO223
MFG: IOR
Package Cooled: TO223
Description: Third Generation HEXFETs from International Rectifier provide the designer with the best combination o...
Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The SOT-223 package is designed for surface-mount using vapor phase, infra red, or wave soldering techniques. Its unique package design allows for easy automatic pick-and- place as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for heatsinking. Power dissipation of grreater than 1.25W is possible in a typical surface mount application.
|
Parameter |
Max. |
Units | |
|
ID @ TC = 25°C |
Continuous Drain Current, VGS @ -10V |
-1.8 |
A |
|
ID @ TC = 100°C |
Continuous Drain Current, VGS @ -10V |
-1.1 | |
|
IDM |
Pulsed Drain Current |
-14 | |
|
PD @TC = 25°C |
Power Dissipation |
3.1 |
W |
|
PD @TA = 25°C |
Power Dissipation (PCB Mount)** |
2.0 | |
| Linear Derating Factor |
0.025 |
W/°C | |
| Linear Derating Factor (PCB Mount)** |
0.017 | ||
|
VGS |
Gate-to-Source Voltage |
-/+20 |
V |
|
EAS |
Single Pulse Avalanche Energy |
140 |
mJ |
|
IAR |
Avalanche Current |
-1.8 |
A |
|
EAR |
Repetitive Avalanche Energy |
0.31 |
mJ |
|
dv/dt |
Peak Diode Recovery dv/dt |
-4.5 |
V/ns |
|
TJ,TSTG
|
Junction and Storage Temperature Range |
-55 to + 150 |
°C |
| Soldering Temperature, for 10 seconds |
300 (1.6mm from case ) |
IRFL9014
PDF/DataSheet Download
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