IRFL9014PbF

      The IRFL9014PbF is from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The SOT-223 package is designed for surface-mount using vapor phase, infra red, or wave soldering techniques.  Its unique package design allows for easy automatic pick-and-place as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for heatsinking.  Power dissipation of grreater than 1.25W is possible in a typical surface mount application.
      The IRFL9014PbF possesses the fatures of Surface Mount, Available in Tape & Reel, Dynamic dv/dt Rating, Repetitive Avalanche Rated, Fast Switching, Ease of Paralleling, Lead-Free.
      The Electrical Characteristics @ TJ = 25°C (unless otherwise specified) of IRFL9014PbF are V(BR)DSS(Drain-to-Source Breakdown Voltage)=-60(min)V(VGS = 0V, ID = 250µA), ∆V(BR)DSS/∆TJ(Breakdown Voltage Temp. Coefficient )=-0.059(typ)V/°C(Reference to 25°C, ID = 1mA), VGS(th) Gate(Threshold Voltage)=-2.0(min)/-4.0(max)V(VDS = VGS, ID = 250µA), gfs (Forward Transconductance)=1.3(min)S(VDS = -25V, ID = 1.1A), Qg (Total Gate Charge)=12(max)nC, Qgs (Gate-to-Source Charge)=3.8(max)nC, Qgd (Gate-to-Drain ("Miller") Charge)=5.1(max)nC[ID =-6.7A, VDS =-48V, VGS = -10V, See Fig. 6 and 13], Ciss(Input Capacitance)/Coss(Output Capacitance)/Crss(Reverse Transfer Capacitance)=270/170/31Pf(VGS = 0V, VDS = 25V, É = 1.0MHz), LD(Internal Drain Inductance)/LS(Internal Source Inductance)=4.0/6.0nH(Between lead, 6mm(0.25in) from package and center of die contact.).
The Source-Drain Ratings and Characteristics of the IRFL9014PbF are IS(Continuous Source Current (Body Diode))=-1.8A, ISM(Pulsed Source Current)=-1.4A(@ MOSFET symbol showing  the integral reverse p-n junction diode.), VSD(Diode Forward Voltage)=-5.5V(TJ = 25°C, IS = -1.8A, VGS = 0V), ton (Forward Turn-On Time)(Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)).