IRFL9110PBF

Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : SOT-223
Configuration : Single Dual Drain
Drain-Source Breakdown Voltage : - 100 V
Continuous Drain Current : 1.1 A
Resistance Drain-Source RDS (on) : 1.2 Ohms


Features:

·Surface Mount
·Available in Tape & Reel
·Dynamic dv/dt Rating
·Repetitive Avalanche Rated
·P-Channel
·Fast Switching
·Ease of Paralleling
·Lead-Free


Specifications

	Parameter	Max.	Units
ID @ TC=25	Continuous Drain Current, VGS @ 10V	-1.1	A
ID @ TC=100	Continuous Drain Current, VGS @ 10V	-0.69	A
IDM	Pulsed Drain Current	-8.8	A
PD @ TC=25	Power Dissipation	3.1	W
PD @ TA=25	Power Dissipation (PCB Mount)**	2.0	W
	Linear Derating Factor	0.025	W/
	Linear Derating Factor(PCB Mount)**	0.017	W/
VGS	Gate-to-Source Voltage	±20	V
EAS	Single Pulse Avalanche Energy	100	mJ
IAR	Avalanche Current	-1.1	A
EAR	Repetitive Avalanche Energy	0.31	mJ
dv/dt	Peak Diode Recovery dv/dt	-5.5	V/ns
TSTG,Tj	Junction and Storage Temperature Range	-55 to +150
	Soldewring Temperature, for 10 seconds	300 (1.6mm from case)

Description

Third Generation HEXFETs of the IRFL9110PbF from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The SOT-223 package of the IRFL9110PbF is designed for surface-mount using vapor phase, infra red, or wave soldering techniques. Its unique package design allows for easy automatic pick-andplace as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for heatsinking. Power dissipation of grreater than 1.25W is possible in a typical surface mount application.