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MFG:FAIRCHILD  Package Cooled:06+  D/C:SOT-223  

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Part Number: IRFM220B

 

MFG: FAIRCHILD

Package Cooled: 06+

D/C: SOT-223

Description: These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprie...


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IRFM220B General Description


These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary planar, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters,switch mode power supplies, DC-AC converters for uninterrupted power supply and motor control.

IRFM220B Maximum Ratings

Symbol
Parameter
IRFP250B
Units
VDSS
Drain-Source Voltage
200
V
ID
Drain Current
- Continuous (TC= 25)
- Continuous (TC= 100)
1.13
0.9
A
A
IDM
VGSS
EAS
IAR
EAR
dv/dt
Drain Current- Pulsed(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy(Note 2)
Avalanche Current(Note 1)
Repetitive Avalanche Energy(Note 1)
Peak Diode Recovery dv/dt(Note 3)
9.0
±30
65
1.13
0.24
5.5
A
V
mJ
A
mJ
V/ns
W
PD
Power Dissipation (TC= 25)
- Derate above 25
24
0.019
W/
TJ,TSTG
Operating and Storage Temperature Range
-55 to +150
TL
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
300
 
Parameter
Typ.
Max.
Units
RJA
Thermal Resistance, Junction-to-Ambient
-
52
/W

IRFM220B Features

`1.13A, 200V, RDS(on) = 0.8 @VGS= 10 V 
`Low gate charge ( typical 12 nC)
`Low Crss ( typical  10 pF)
`Fast switching
`Improved dv/dt capability

IRFM220B datasheet

IRF034
PDF/DataSheet Download

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