IRFN250

Features: ·Avalanche Energy Rating·Dynamic dv/dt Rating·Simple Drive Requirements·Ease of Paralleling·Hermetically Sealed·Surface Mount·Light-weightSpecifications Parameter IRFN250 Units ID @ VGS = 10V, CT = 25°C Continuous Drain Curren 27.4 A ID @ VGS = 10V, TC = 100°C Continuo...

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SeekIC No. : 004377214 Detail

IRFN250: Features: ·Avalanche Energy Rating·Dynamic dv/dt Rating·Simple Drive Requirements·Ease of Paralleling·Hermetically Sealed·Surface Mount·Light-weightSpecifications Parameter IRFN250 Units ...

floor Price/Ceiling Price

Part Number:
IRFN250
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/5/5

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Product Details

Description



Features:

·Avalanche Energy Rating
·Dynamic dv/dt Rating
·Simple Drive Requirements
·Ease of Paralleling
·Hermetically Sealed
·Surface Mount
·Light-weight



Specifications

  Parameter IRFN250 Units
ID @ VGS = 10V, CT = 25°C
Continuous Drain Curren 27.4 A
ID @ VGS = 10V, TC = 100°C
Continuous Drain Curren 17
IDM Pulsed Drain Current 110
PD @ TC = 25°C
CMax. Power Dissipatio 150 W
  Linear Derating Factor 1.2 W/L
VGS Gate-to-Source Voltage ±20 V
EAS Single Pulse Avalanche Energy 500 mJ
IAR Avalanche Current 27.4 A
EAR Repetitive Avalanche Energy 15.0 mJ
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
TJ
TSTG
Operating Junction
Storage Temperature Range
-55 to 150 °C
  Package Mounting Surface Temperature
300 (for 5seconds)
  Weight 2.6 (typical) g



Description

HEXFET technology  IRFN250 is the key to International Rectifier!advanced line of power MOSFET transistors. The effi- cient geometry achieves very low on-state resistance com-bined with high transconductance.

HEXFET transistors IRFN250 also feature all of the well-establish advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and electrical param- eter temperature stability. They are well-suited for appli- cations such as switching power supplies, motor controls, inverters, choppers, audio amplifiers, and high energy pulse circuits.

The Surface Mount Device (SMD-1) IRFN250 package represents another step in the continual evolution of surface mount technology. The SMD-1 will give designers the extra flex-ibility they need to increase circuit board density. Inter-national Rectifier has engineered the SMD-1 package to meet the specific needs of the power market by increas- ing the size of the termination pads, thereby enhancing thermal and electrical performance.




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