MOSFET 200V N-CHAN
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Features: • HERMETICALLY SEALED SURFACE MOUNT PACKAGE• SMALL FOOTPRINT EFFICIENT USE ...
| Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 200 V | ||
| Gate-Source Breakdown Voltage : | +/- 30 V | Continuous Drain Current : | 1 A | ||
| Resistance Drain-Source RDS (on) : | 1.5 Ohms | Configuration : | Single | ||
| Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole | ||
| Package / Case : | TO-92L | Packaging : | Ammo |
| Technical/Catalog Information | IRFNL210BTA_FP001 |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 200V |
| Current - Continuous Drain (Id) @ 25° C | 1A |
| Rds On (Max) @ Id, Vgs | 1.5 Ohm @ 500mA, 10V |
| Input Capacitance (Ciss) @ Vds | 225pF @ 25V |
| Power - Max | 3.1W |
| Packaging | Tape & Box (TB) |
| Gate Charge (Qg) @ Vgs | 9.3nC @ 10V |
| Package / Case | TO-92L |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | IRFNL210BTA_FP001 IRFNL210BTA_FP001 |