IRFP048NPBF

The IRFP048NPBF is designed as one kind of power MOSFET device that has some points of features:(1)Dynamic dV/dt Rating; (2)Isolated Central Mounting Hole; (3)175 Operating Temperature; (4)Ease of Paralleling; (5)Simple Drive Requirements; (6)Lead (Pb)-free Available. The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices.

The absolute maximum ratings of the IRFP048NPBF can be summarized as:(1)Drain-Source Voltage: 60 V;(2)Gate-Source Voltage: +/- 20 V;(3)Continuous Drain Current: 70 or 52 A;(4)Pulsed Drain Current: 290 A;(5)Single Pulse Avalanche Energy: 200 mJ;(6)Linear Derating Factor: 1.3 W/°C;(7)Power Dissipation: 190 W;(8)Operating Junction and Storage Temperature Range: -55 to 175 °C.

The electrical characteristics of the IRFP048NPBF can be summarized as:(1)Drain-Source Breakdown Voltage: 60 V;(2)Gate-Source Threshold Voltage: 2.0 to 4.0 V;(3)Gate-Source Leakage: ±100 nA;(4)Zero Gate Voltage Drain Current: 25 or 250 uA;(5)Drain-Source On-State Resistance: 0.018 ;(6)Forward Transconductance: 20.0 S. If you want to know more information such as the electrical characteristics about the IRFP048NPBF, please download the datasheet in www.seekic.com or www.chinaicmart.com.