MFG:IR Package Cooled:TO-247 D/C:05+06+
MFG: IR
Package Cooled: TO-247
D/C: 05+06+
Description: Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques...
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole.
| Parameter |
Max. |
Units | |
| ID @ TC = 25°C | Continuous Drain Current, VGS @ 10V |
130 |
A |
| ID @ TC = 100°C | Continuous Drain Current, VGS @ 10V |
66 | |
| IDM | Pulsed Drain Current |
360 | |
| PD @TC = 25°C | Power Dissipation |
180 |
W |
| Linear Derating Factor |
1.2 |
W/°C | |
| VGS | Gate-to-Source Voltage |
± 20 |
V |
| EAS | Single Pulse Avalanche Energy |
90 |
mJ |
| IAR | Avalanche Current |
18 |
A |
| EAR | Repetitive Avalanche Energy |
12 |
mJ |
| dv/dt | Peak Diode Recovery dv/dt |
4.7 |
V/ns |
| TJ TSTG |
Operating Junction and Storage Temperature Range |
-55 to + 175 |
°C |
| Soldering Temperature, for 10 seconds |
300 (1.6mm from case ) | ||
| Mounting torque, 6-32 or M3 screw |
10 lbf•in (1.1N•m) |
IRFP054V
PDF/DataSheet Download
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