IRFP064N

Features:

Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated

Specifications

	Parameter	Max.	Units
ID @ TC = 25°C	Continuous Drain Current, VGS @ 10V	110	A
ID @ TC = 100°C	Continuous Drain Current, VGS @ 10V	80
IDM	Pulsed Drain Current	390
PD @TC = 25°C	Power Dissipation	200	W
	Linear Derating Factor	1.3	W/°C
VGS	Gate-to-Source Voltage	±20	V
EAS	Single Pulse Avalanche Energy	480	mJ
IAR	Avalanche Current	59	A
EAR	Repetitive Avalanche Energy	20	mJ
dv/dt	Peak Diode Recovery dv/dt	5.0	V/ns
TJ TSTG	Operating Junction and Storage Temperature Range	-55 to + 175	°C
	Soldering Temperature, for 10 seconds	300 (1.6mm from case )
	Mounting torque, 6-32 or M3 srew	10 lbf•in (1.1N•m)

Description

Fifth Generation HEXFETs IRFP064N from International Rectifier utilize advanced processing techniques to achieve extremely low  on-resistance per silicon area.  This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The TO-247 package IRFP064N is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices.  The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole.


Parameters:

Technical/Catalog Information	IRFP064N
Vendor	International Rectifier
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	55V
Current - Continuous Drain (Id) @ 25° C	110A
Rds On (Max) @ Id, Vgs	8 mOhm @ 59A, 10V
Input Capacitance (Ciss) @ Vds	4000pF @ 25V
Power - Max	200W
Packaging	Bulk
Gate Charge (Qg) @ Vgs	170nC @ 10V
Package / Case	TO-247-3 (TO-247AC, Straight Leads)
FET Feature	Standard
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	IRFP064N IRFP064N