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MFG:IR  Package Cooled:TO-247  D/C:5  

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Part Number: IRFP064N

 

MFG: IR

Package Cooled: TO-247

D/C: 5

Description: Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low&n...


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IRFP064N General Description


Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low  on-resistance per silicon area.  This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices.  The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole.

IRFP064N Maximum Ratings

  Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 110 A
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 80
IDM Pulsed Drain Current 390
PD @TC = 25°C Power Dissipation 200 W
  Linear Derating Factor 1.3 W/°C
VGS Gate-to-Source Voltage ±20 V
EAS Single Pulse Avalanche Energy 480 mJ
IAR Avalanche Current 59 A
EAR Repetitive Avalanche Energy 20 mJ
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
TJ
TSTG		 Operating Junction and
Storage Temperature Range		 -55 to + 175 °C
  Soldering Temperature, for 10 seconds 300 (1.6mm from case )
  Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)  

IRFP064N Features

Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated

IRFP064N datasheet

IRFP064N
PDF/DataSheet Download

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