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MFG:IR  Package Cooled:06+  

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Part Number: IRFP064V

 

MFG: IR

Package Cooled: 06+

 

Description: Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques...


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IRFP064V General Description


Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole.

IRFP064V Maximum Ratings

  Parameter
Max.
Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V
130
A
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
95
IDM Pulsed Drain Current
520
PD @TC = 25°C Power Dissipation
250
W
  Linear Derating Factor
1.7
W/°C
VGS Gate-to-Source Voltage
± 20
V
EAS Single Pulse Avalanche Energy
130
mJ
IAR Avalanche Current
25
A
EAR Repetitive Avalanche Energy
12
mJ
dv/dt Peak Diode Recovery dv/dt
4.7
V/ns
TJ
TSTG		 Operating Junction and
Storage Temperature Range
-55 to + 175
°C
  Soldering Temperature, for 10 seconds
300 (1.6mm from case )
  Mounting torque, 6-32 or M3 screw
10 lbf•in (1.1N•m)
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IRFP064V Features

·Advanced Process Technology
·Ultra Low On-Resistance
·Dynamic dv/dt Rating
·175°C Operating Temperature
· Fast Switching
·Fully Avalanche Rated
·Optimized for SMPS Applications

IRFP064V datasheet

IRFP064V
PDF/DataSheet Download

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