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Part Number: IRFP064VPbF

 

MFG: IR

 

 

Description: Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to a...


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IRFP064VPbF General Description


Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole.

IRFP064VPbF Maximum Ratings

Symbol Parameter Max. Units
VDS Drain- Source Voltage 130 V
ID @ TA= 25 Continuous Drain Current, VGS @ -4.5V 95 A
ID @ TA= 100 Continuous Drain Current, VGS @ -4.5V 520 A
IDM Pulsed Drain Current 250 A
PD @ TA = 25 Power Dissipation ±20 W
PD @ TA = 70 Power Dissipation 130 W
  Linear Derating Factor 25 W/
EAS Single Pulse Avalanche Energy 4.7 mJ
VGS Gate-to-Source Voltage ± 12 V
TJ, TSTG Junction and Storage Temperature Range -55 to + 150

IRFP064VPbF Features

· Advanced Process Technology
· Ultra Low On-Resistance
· Dynamic dv/dt Rating
· 175°C Operating Temperature
· Fast Switching
· Fully Avalanche Rated
· Optimized for SMPS Applications
· Lead-Free

IRFP064VPbF datasheet

IRF034
PDF/DataSheet Download

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